DHG 20 C 1200 PB
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
IFSM
IR
A
V
60
IFAV
A
VF
2.22
RthJC
1.50 K/W
VR
=
1200
1
2
3
min.
10
t = 10 ms
(50 Hz), sine
Applications:
VRRM
V
1200
V°=
25
C10
μA
TVJ
TVJ
=m125
0.2
A
°C
Package:
Part number
VR
=
1200
TVJ
=°C25
IF
=A10
V
TC
=
105°C
rectangular 0.5d =
Ptot
85 W
TC
=
25
°C
TVJ
150 °C
-55
VRRM
=
IFAV
=
2x
1200
V
10
A
TVJ
=
45°C
DHG 20 C 1200 PB
V
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.93
TVJ
=25
°C
CJ
junction capacitance
V = V;R
600
f = 1 MHz
TVJ
VF0
V
1.23
TVJ
=
150°C
rF
90
= °C25
m?
V
2.23
TVJ
=°C125
IF
=A10
V
3.14
IF
=A20
IF
=A20
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
9A
TVJ
=°C25
reverse recovery time
A
10.5
200
350
ns
trr
=
200 ns
●
Housing:
TO-220
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
IRM
max. reverse recovery current
IF
=A;10
VR
=V600
T=VJ
125°C
-diF/dt
=A/μs250
trr
TVJ
=°C25
T=VJ
125°C
4
pF
thermal resistance junction to case
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
average forward current
IXYS reserves the right to change limits, conditions and dimensions.
?
2011 IXYS all rights reserved
20110715a
Data according to IEC 60747and per diode unless otherwise specified
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